IRF820

Quantity	excl. VAT	VAT incl.
1 - 4	1.32$	1.32$
5 - 9	1.25$	1.25$
10 - 24	1.19$	1.19$
25 - 49	1.12$	1.12$
50 - 99	1.09$	1.09$
100 - 112	0.94$	0.94$

Quantity	U.P
1 - 4	1.32$	1.32$
5 - 9	1.25$	1.25$
10 - 24	1.19$	1.19$
25 - 49	1.12$	1.12$
50 - 99	1.09$	1.09$
100 - 112	0.94$	0.94$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 112

Set of 1

IRF820. Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. C(in): 360pF. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!