Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.29$ | 2.29$ |
5 - 9 | 2.18$ | 2.18$ |
10 - 24 | 2.06$ | 2.06$ |
25 - 42 | 1.95$ | 1.95$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.29$ | 2.29$ |
5 - 9 | 2.18$ | 2.18$ |
10 - 24 | 2.06$ | 2.06$ |
25 - 42 | 1.95$ | 1.95$ |
IRF840AS. C(in): 1018pF. Cost): 155pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 12/01/2025, 20:25.
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