Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.60$ | 1.60$ |
5 - 9 | 1.52$ | 1.52$ |
10 - 24 | 1.44$ | 1.44$ |
25 - 45 | 1.36$ | 1.36$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.60$ | 1.60$ |
5 - 9 | 1.52$ | 1.52$ |
10 - 24 | 1.44$ | 1.44$ |
25 - 45 | 1.36$ | 1.36$ |
IRF9530N. C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 16:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.