Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.07$ | 2.07$ |
5 - 9 | 1.96$ | 1.96$ |
10 - 24 | 1.86$ | 1.86$ |
25 - 49 | 1.76$ | 1.76$ |
50 - 99 | 1.72$ | 1.72$ |
100 - 101 | 1.54$ | 1.54$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.07$ | 2.07$ |
5 - 9 | 1.96$ | 1.96$ |
10 - 24 | 1.86$ | 1.86$ |
25 - 49 | 1.76$ | 1.76$ |
50 - 99 | 1.72$ | 1.72$ |
100 - 101 | 1.54$ | 1.54$ |
IRF840A. C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.
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