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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, PCB soldering, TO-220AB, 1, -100V, -4A, TO-220, TO-220AB, 100V - IRF9510PBF

P-channel transistor, PCB soldering, TO-220AB, 1, -100V, -4A, TO-220, TO-220AB, 100V - IRF9510PBF
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Quantity excl. VAT VAT incl.
1 - 4 0.81$ 0.81$
5 - 9 0.77$ 0.77$
10 - 24 0.74$ 0.74$
25 - 49 0.73$ 0.73$
50 - 99 0.71$ 0.71$
100 - 249 0.73$ 0.73$
250 - 1230 0.94$ 0.94$
Quantity U.P
1 - 4 0.81$ 0.81$
5 - 9 0.77$ 0.77$
10 - 24 0.74$ 0.74$
25 - 49 0.73$ 0.73$
50 - 99 0.71$ 0.71$
100 - 249 0.73$ 0.73$
250 - 1230 0.94$ 0.94$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1230
Set of 1

P-channel transistor, PCB soldering, TO-220AB, 1, -100V, -4A, TO-220, TO-220AB, 100V - IRF9510PBF. P-channel transistor, PCB soldering, TO-220AB, 1, -100V, -4A, TO-220, TO-220AB, 100V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 1. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9510PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -2.4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 43W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Td(on): 10 ns. Technology: V-MOS. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Original product from manufacturer Vishay. Quantity in stock updated on 21/05/2025, 07:25.

Technical documentation

Equivalent products :

Quantity in stock : 263
IRF9520N

IRF9520N

P-channel transistor, 6.8A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 250uA. Ho...
IRF9520N
P-channel transistor, 6.8A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 350pF. Cost): 110pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. G-S Protection: no. Id(imp): 27A. ID (T=100°C): 4.1A. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRF9520N
P-channel transistor, 6.8A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 350pF. Cost): 110pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. G-S Protection: no. Id(imp): 27A. ID (T=100°C): 4.1A. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.38$ VAT incl.
(1.38$ excl. VAT)
1.38$
Quantity in stock : 17
IRF9520

IRF9520

P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 500uA. Ho...
IRF9520
P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 27A. ID (T=100°C): 4.8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRF9520
P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 27A. ID (T=100°C): 4.8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.34$ VAT incl.
(1.34$ excl. VAT)
1.34$

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