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Semiconductors Transistors

IRF9510PBF

IRF9510PBF
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.81$ 0.81$
5 - 9 0.77$ 0.77$
10 - 24 0.73$ 0.73$
25 - 49 0.69$ 0.69$
50 - 99 0.67$ 0.67$
100 - 249 0.70$ 0.70$
250 - 1440 0.87$ 0.87$
Quantity U.P
1 - 4 0.81$ 0.81$
5 - 9 0.77$ 0.77$
10 - 24 0.73$ 0.73$
25 - 49 0.69$ 0.69$
50 - 99 0.67$ 0.67$
100 - 249 0.70$ 0.70$
250 - 1440 0.87$ 0.87$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1440
Set of 1

IRF9510PBF. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9510PBF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -2.4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 43W. Td(on): 10 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1. Quantity in stock updated on 25/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 264
IRF9520N

IRF9520N

C(in): 350pF. Cost): 110pF. Channel type: P. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. F...
IRF9520N
C(in): 350pF. Cost): 110pF. Channel type: P. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 27A. ID (T=100°C): 4.1A. ID (T=25°C): 6.8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF9520N
C(in): 350pF. Cost): 110pF. Channel type: P. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 27A. ID (T=100°C): 4.1A. ID (T=25°C): 6.8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.38$ VAT incl.
(1.38$ excl. VAT)
1.38$
Quantity in stock : 19
IRF9520

IRF9520

C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.)...
IRF9520
C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.8A. ID (T=25°C): 6.8A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF9520
C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.8A. ID (T=25°C): 6.8A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.34$ VAT incl.
(1.34$ excl. VAT)
1.34$

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FGH40N60SFDTU

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MOF1145JAFSR130

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