Transistors

Function: P-channel MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7304. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 8.4 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 610pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7306. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ -1.8A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Function: 0.05R & 0.1R. ID (T=25°C): 4.7A & 3.5A. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 2

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7309. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 4A/-3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.1 Ohms @ 2.4/-1.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8/11 ns. Switch-off delay tf[nsec.]: 22/25 ns. Ciss Gate Capacitance [pF]: 520/440pF. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF730PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 5.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ 3.3A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 38 ns. Ciss Gate Capacitance [pF]: 700pF. Maximum dissipation Ptot [W]: 74W. Housing (JEDEC standard): 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Function: N MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2

Function: N MOSFET transistor. Equivalents: IRF7313PBF. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7313. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6.5A/6.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.029 Ohms @ 5.8A/5.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7313. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6.5A/6.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.029 Ohms @ 5.8A/5.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Function: P-channel MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7314. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.058 Ohms @ -2.9A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 63 ns. Ciss Gate Capacitance [pF]: 780pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--30Ap

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7316. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.098 Ohms @ -3.6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 710pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 780pF. Cost): 430pF. Channel type: N-P. Trr Diode (Min.): 47 ns. Function: 0.029R & 0.58R. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7317. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 6.6A / -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 6/-2.9A. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 57/63 ns. Ciss Gate Capacitance [pF]: 900/780pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Note: ( = P23AF 4532 SMD ). Note: Rds-on 0.029 Ohms / 0.058 Ohms

Id(imp): 32A. ID (T=100°C): 6.4A. ID (T=25°C): 8A. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 0.017 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Type of transistor: PNP & PNP. Voltage Vds(max): 30 v. Quantity per case: 2. Function: Dual P-channel Mosfet transistor. Ultra-low RDS on-resistance

Channel type: N. Conditioning: plastic tube. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Conditioning unit: 95. Function: tf 13ns, td(on) 8.3ns, td(off) 32ns

Channel type: P. Equivalents: IRF7342PBF. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--27Ap

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7342. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7342. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.043 Ohms & 0.095 Ohms

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7343. Drain-source voltage Uds [V]: 55V/-55V. Drain Current Id [A] @ 25°C: 4.7A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 48/64 ns. Ciss Gate Capacitance [pF]: 740/690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7343. Drain-source voltage Uds [V]: 55V/-55V. Drain Current Id [A] @ 25°C: 4.7A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 48/64 ns. Ciss Gate Capacitance [pF]: 740/690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C