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Semiconductors Transistors

IRF9530

IRF9530
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.48$ 1.48$
5 - 9 1.40$ 1.40$
10 - 24 1.33$ 1.33$
25 - 49 1.26$ 1.26$
50 - 99 1.23$ 1.23$
100 - 128 1.05$ 1.05$
Quantity U.P
1 - 4 1.48$ 1.48$
5 - 9 1.40$ 1.40$
10 - 24 1.33$ 1.33$
25 - 49 1.26$ 1.26$
50 - 99 1.23$ 1.23$
100 - 128 1.05$ 1.05$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 128
Set of 1

IRF9530. C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. ID (T=25°C): 12A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 45
IRF9530N

IRF9530N

C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.)...
IRF9530N
C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF9530N
C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.60$ VAT incl.
(1.60$ excl. VAT)
1.60$

We also recommend :

Quantity in stock : 120
IRF530N

IRF530N

C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drai...
IRF530N
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IRF9530

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IRF530

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2SA1837

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2SB649A

2SB649A

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2SC4793

2SC4793

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
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HSP75

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IRL530N

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C(in): 800pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per cas...
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IRF5305

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C(in): 1200pF. Cost): 520pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Dra...
IRF5305
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1.57$

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