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Electronic components and equipment, for businesses and individuals

IRF840

IRF840
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.11$ 2.11$
5 - 9 2.00$ 2.00$
10 - 24 1.90$ 1.90$
25 - 49 1.79$ 1.79$
50 - 99 1.75$ 1.75$
100 - 173 1.60$ 1.60$
Quantity U.P
1 - 4 2.11$ 2.11$
5 - 9 2.00$ 2.00$
10 - 24 1.90$ 1.90$
25 - 49 1.79$ 1.79$
50 - 99 1.75$ 1.75$
100 - 173 1.60$ 1.60$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 173
Set of 1

IRF840. C(in): 1300pF. Cost): 310pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 4.8A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

Equivalent products :

Quantity in stock : 101
IRF840A

IRF840A

C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. ...
IRF840A
C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF840A
C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$

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Quantity in stock : 173
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1N4004

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CFR1-4W-18K

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2N2222A

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LM358P

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BR310

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TK20J50D

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