IRF8707G

IRF8707G. C(in): 760pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. Id(imp): 88A. ID (T=100°C): 9.1A. ID (T=25°C): 11A. Idss (max): 150uA. IDss (min): 1uA. Marking on the case: IRF8707G. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.142 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 7.3 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -50...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 4.5V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 12/01/2025, 20:25.