Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.52$ | 1.52$ |
5 - 9 | 1.44$ | 1.44$ |
10 - 24 | 1.37$ | 1.37$ |
25 - 49 | 1.29$ | 1.29$ |
50 - 72 | 1.26$ | 1.26$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.52$ | 1.52$ |
5 - 9 | 1.44$ | 1.44$ |
10 - 24 | 1.37$ | 1.37$ |
25 - 49 | 1.29$ | 1.29$ |
50 - 72 | 1.26$ | 1.26$ |
IRF830APBF. C(in): 620 ns. Cost): 93 ns. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 20A. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. IDss (min): 25uA. Temperature: +105°C. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 1.4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V. Quantity in stock updated on 12/01/2025, 20:25.
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