Transistors

C(in): 2830pF. Cost): 3310pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 68A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 50uA. Pd (Power Dissipation, Max): 220W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 2870pF. Cost): 3480pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 80A. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 50uA. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.21 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1200pF. Cost): 260pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 92A. ID (T=100°C): 17A. ID (T=25°C): 23A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: B23N15D. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

C(in): 4220pF. Cost): 580pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 220A. ID (T=100°C): 40A. ID (T=25°C): 56A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FB260N. Pd (Power Dissipation, Max): 380W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: SMPS, High frequency DC-DC converters. G-S Protection: no

C(in): 8970pF. Cost): 1020pF. Channel type: N. Trr Diode (Min.): 44 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 1080A. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 375W. On-resistance Rds On: 0.0021 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 9400pF. Cost): 820pF. Channel type: N. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 850A. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 370W. On-resistance Rds On: 0.0028 Ohm. Assembly/installation: PCB through-hole mounting. Td(off): 69 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 6540pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 840A. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 2.4M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 670A. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.3M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 670A. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: FB3207. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.3M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 4520pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 31 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 620A. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 3.3M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 4750pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 512A. ID (T=100°C): 90A. ID (T=25°C): 128A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.0046 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

Cost): 280pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 310A. ID (T=100°C): 56A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. C(in): 3070pF. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 800pF. Cost): 74pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. Id(imp): 51A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 80W. On-resistance Rds On: 80m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 7 ns. Technology: Digital Audio MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.9V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

C(in): 1200pF. Cost): 91pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. Id(imp): 52A. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 80m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7.8 ns. Technology: Digital Audio MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4.9V. Vgs(th) min.: 3V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 9620pF. Cost): 670pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 670A. ID (T=100°C): 130A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 370W. On-resistance Rds On: 3.7m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 78 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Weight: 1.99g. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

Cost): 490pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 380W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 3V. Number of terminals: 3. Weight: 1.99g. C(in): 5270pF. Id(imp): 420A. On-resistance Rds On: 0.0093 Ohms. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 260A. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 19.7m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 4530pF. Cost): 550pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 330A. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 1mA. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 24 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 4560pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Class-D Audio Amplifier 300W-500W (Half-bridge). Id(imp): 180A. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 1mA. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 38m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+175°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 3430pF. Cost): 530pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 180A. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FB42N20D. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.055 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: SMPS, High frequency DC-DC converters. G-S Protection: no

C(in): 4820pF. Cost): 340pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. Id(imp): 390A. ID (T=100°C): 69A. ID (T=25°C): 97A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: IRFB4410ZPBF. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.072 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 7670pF. Cost): 540pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 550A. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: IRFB4310. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 5.6M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 6160pF. Cost): 440pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 300A. ID (T=100°C): 53A. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: FB4710. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFB4710PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 45A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 35 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 6160pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 2770pF. Cost): 590pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 230A. ID (T=100°C): 36A. ID (T=25°C): 51A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FB52N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.032 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: High frequency DC-DC converters, Plasma Display. Drain-source protection : yes. G-S Protection: no