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Semiconductors Transistors

IRF9520

IRF9520
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.34$ 1.34$
5 - 9 1.27$ 1.27$
10 - 19 1.20$ 1.20$
Quantity U.P
1 - 4 1.34$ 1.34$
5 - 9 1.27$ 1.27$
10 - 19 1.20$ 1.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 19
Set of 1

IRF9520. C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.8A. ID (T=25°C): 6.8A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 128
IRF9530

IRF9530

C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Fu...
IRF9530
C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. ID (T=25°C): 12A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF9530
C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. ID (T=25°C): 12A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.48$ VAT incl.
(1.48$ excl. VAT)
1.48$

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Quantity in stock : 190
IRF530

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C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quan...
IRF530
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IRF9530N

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IRF540

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C(in): 1700pF. Cost): 560pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type o...
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IRL530N

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LM35DZ

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BS250P

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C(in): 60pF. Channel type: P. Type of transistor: MOSFET. Id(imp): 3A. ID (T=25°C): 0.23A. Idss (ma...
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IRFP150

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C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qu...
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IRF530N

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C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drai...
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IRFP250N

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C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Dra...
IRFP250N
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Quantity in stock : 123
FUSE-8-000A32T

FUSE-8-000A32T

Max Continuous current: 8A. Fuse type: Glass (Cylindrical). Fuse properties: time delay fuse (T). ...
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