Transistors

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.029 Ohms & 0.058 Ohms

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7389. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 5.9A/-4.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 5.8/-4.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.1 ns/13 ns. Switch-off delay tf[nsec.]: 26/34 ns. Ciss Gate Capacitance [pF]: 650/710pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF740LC. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 1100pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Number of terminals: 3. Manufacturer's marking: IRF740PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 125W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 10A. Power: 125W. Housing: TO-220. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): 400V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF740SPBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1600pF. Cost): 680pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Id(imp): 58A. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 25uA. IDss (min): 12uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 8.6 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7413. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1210pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Ultra-Low Gate Impedance. Id(imp): 100A. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 8.7 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity per case: 1. Conditioning unit: 95. On-resistance Rds On: 0.008 Ohms. G-S Protection: no

C(in): 1700pF. Cost): 890pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 45A. ID (T=100°C): 7.1A. ID (T=25°C): 10A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.02 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 59 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Vgs(th) max.: 2.04V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7416. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -5.6A. Gate breakdown voltage Ugs [V]: -2.04V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 59 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7424. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0035 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -2.04V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 150 ns. Ciss Gate Capacitance [pF]: 4030pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 7980pF. Cost): 1480pF. Channel type: P. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.082 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 230 ns. Td(on): 13 ns. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 20V. Gate/source voltage Vgs: 12V. Vgs(th) max.: 1.2V. Vgs(th) min.: 0.45V. Drain-source protection : yes. G-S Protection: no

C(in): 3480pF. Cost): 870pF. Channel type: N. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, High Frequency DC-DC Converters. Id(imp): 60.4k Ohms. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 100uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.006 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51 ns. Td(on): 17 ns. Technology: V-MOS. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -50...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7455. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 15A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0075 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3480pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7468. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 9.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0015 Ohms @ 9.4A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.6 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 2460pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Drain-source protection : Zener diode. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 66A. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 150uA. IDss (min): 30uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.017 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 12 ns. Technology: HEXFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 66A. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 100uA. IDss (min): 20uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.017 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 6.3 ns. Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 31us. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 88A. ID (T=100°C): 8.7A. ID (T=25°C): 11A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7811. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 10.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1801pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7821. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0091 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 6.3 ns. Switch-off delay tf[nsec.]: 9.7 ns. Ciss Gate Capacitance [pF]: 1010pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7831. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 21A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0036 Ohms @ 20A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 17 ns. Ciss Gate Capacitance [pF]: 6240pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 4310pF. Cost): 990pF. Channel type: N. Trr Diode (Min.): 41us. Type of transistor: MOSFET. Function: Synchronous MOSFET for Notebook Processor Power. Id(imp): 160A. ID (T=100°C): 16A. ID (T=25°C): 20A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.031 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10 ns. Td(on): 21 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.32V. Vgs(th) min.: 1.39V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 99 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no