Transistors

Type of transistor: IGBT transistor. Drain-source voltage: 1200V. Collector current: 50A. Power: 326W. Housing: TO-247AC

C(in): 4620pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Collector current: 140A. Ic(pulse): 225A. Ic(T=100°C): 75A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: no. Germanium diode: no

C(in): 1165pF. Cost): 40pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking. Collector current: 30A. Ic(pulse): 45A. Ic(T=100°C): 15A. Marking on the case: H15R1203. Number of terminals: 3. Pd (Power Dissipation, Max): 254W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.48V. Maximum saturation voltage VCE(sat): 1.75V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no

C(in): 1340pF. Cost): 43pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). CE diode: yes. Germanium diode: no

C(in): 1500pF. Cost): 55pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive?cooking. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: H20R1353. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 405 ns. Td(on): 335 ns. Housing: TO-247. Housing (according to data sheet): TO-247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 1350V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no

C(in): 1360pF. Cost): 43pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 50 ns. Function: Reverse conducting IGBT with monolithic body diode. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: H20PR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Technology: TRENCHSTOP TM technology. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.85V. Collector/emitter voltage Vceo: 1350V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). CE diode: yes. Germanium diode: no

C(in): 1460pF. Cost): 78pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Soft Switching Applications. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: H20T120. Number of terminals: 3. Pd (Power Dissipation, Max): 178W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 560 ns. Td(on): 50 ns. Technology: 'Trench and Fieldstop' technology IGBT transistor. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.2V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. CE diode: yes. Germanium diode: no

C(in): 2589pF. Cost): 77pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 60A. Ic(pulse): 90A. Ic(T=100°C): 30A. Marking on the case: H30R1202. Number of terminals: 3. Pd (Power Dissipation, Max): 390W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 792 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: Inductive Cooking, Soft Switching Applications. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no

C(in): 1810pF. Cost): 50pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 60A. Ic(pulse): 90A. Ic(T=100°C): 30A. Marking on the case: H30PR5. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.95V. Collector/emitter voltage Vceo: 1350V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: Inductive Cooking, Microwave Ovens. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no

Type of transistor: IGBT transistor. Collector-emitter voltage: 600V. Collector current: 40A. Power: 305W. Housing: TO-247AC

Channel type: N. Function: 6 x IGBT For Power Management. Collector current: 15A. Ic(pulse): 30A. Note: three phase AC motor driver. Frequency: 20kHz. Equivalents: Samsung--DC13-00253A. Number of terminals: 24. Pd (Power Dissipation, Max): 27.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 800 ns. Td(on): 560 ns. Technology: Control Integrated POwer System (CIPOS™). Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 2.05V. Collector/emitter voltage Vceo: 600V. Spec info: Ic 15A @ 25°C, 10A @ 80°C. CE diode: yes. Germanium diode: no

Type of transistor: IGBT transistor. Collector-emitter voltage: 600V. Collector current: 24A. Power: 110W. Housing: TO-220AB

C(in): 860pF. Cost): 55pF. Channel type: N. Function: High Speed ​​IGBT in NPT technology. Collector current: 15A. Ic(pulse): 45A. Ic(T=100°C): 15A. Marking on the case: K15T60. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 188 ns. Td(on): 17 ns. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.05V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. CE diode: yes. Germanium diode: no

Type of transistor: IGBT transistor. Drain-source voltage: 1200V. Collector current: 50A. Power: 326W. Housing: TO-247AC. Built-in diode: yes

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K25T1202. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 25A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 265 ns. Gate breakdown voltage Ugs [V]: 6.4V. Maximum dissipation Ptot [W]: 349W. Maximum collector current (A): 100A. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +175°C

C(in): 1860pF. Cost): 96pF. Channel type: N. Trr Diode (Min.): 200 ns. Function: 'Trench and Fieldstop' technology IGBT transistor. Collector current: 50A. Ic(pulse): 75A. Ic(T=100°C): 25A. Marking on the case: K25T120. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 560 ns. Td(on): 50 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.2V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. CE diode: yes. Germanium diode: no

C(in): 1630pF. Cost): 107pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 117 ns. Function: High Speed Switching, Very Low VCEsat. Collector current: 60A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 30A. Marking on the case: K30H603. Number of terminals: 3. Pd (Power Dissipation, Max): 187W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 207 ns. Td(on): 21 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no

C(in): 2330pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 200 ns. Function: 'Trench and Fieldstop' technology IGBT transistor. Collector current: 80A. Ic(pulse): 180A. Ic(T=100°C): 40A. Marking on the case: K40H1203. Number of terminals: 3. Pd (Power Dissipation, Max): 483W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 290 ns. Td(on): 30 ns. Housing: TO-247. Housing (according to data sheet): TO-247N. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 2.05V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. CE diode: yes. Germanium diode: no

Type of transistor: IGBT transistor. Collector-emitter voltage: 1200V. Collector current: 82A. Power: 428W. Housing: TO-247AC. Built-in diode: yes

C(in): 116pF. Cost): 2960pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 130 ns. Diode threshold voltage: 1.65V. Function: High Speed Switching, Very Low VCEsat. Collector current: 100A. Ic(pulse): 200A. Ic(T=100°C): 50A. Marking on the case: K50H603. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Td(on): 23 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no

C(in): 3140pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 143 ns. Function: Very low VCEsat. Collector current: 80A. Ic(pulse): 150A. Ic(T=100°C): 50A. Marking on the case: K50T60. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 299 ns. Td(on): 26 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no

C(in): 4620pF. Cost): 288pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 182 ns. Function: Very low VCEsat. Collector current: 80A. Ic(pulse): 225A. Ic(T=100°C): 75A. Marking on the case: K75T60. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Td(on): 33 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no

Number of terminals: 8. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-8

C(in): 440pF. Cost): 30pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: ID pulse 19A. Id(imp): 19A. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 10uA. IDss (min): 1uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 6R600E6. Number of terminals: 3. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58 ns. Td(on): 10 ns. Technology: Cool Mos E6 POWER trafnsistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no

C(in): 785pF. Cost): 33pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: ID pulse 18A. Id(imp): 18A. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 50uA. IDss (min): 10uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 8R1K0CE. Number of terminals: 3. Pd (Power Dissipation, Max): 32W. On-resistance Rds On: 0.83 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos E6 POWER trafnsistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: -20V. Drain-source protection : yes. G-S Protection: no