IKW30N60H3

Quantity	excl. VAT	VAT incl.
1 - 1	9.23$	9.23$
2 - 2	8.77$	8.77$
3 - 4	8.31$	8.31$
5 - 9	7.84$	7.84$
10 - 14	7.66$	7.66$

Quantity	U.P
1 - 1	9.23$	9.23$
2 - 2	8.77$	8.77$
3 - 4	8.31$	8.31$
5 - 9	7.84$	7.84$
10 - 14	7.66$	7.66$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 14

Set of 1

IKW30N60H3. C(in): 1630pF. Cost): 107pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 117 ns. Function: High Speed Switching, Very Low VCEsat. Collector current: 60A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 30A. Marking on the case: K30H603. Number of terminals: 3. Pd (Power Dissipation, Max): 187W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 207 ns. Td(on): 21 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 25/12/2024, 03:25.

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Delivery in 2-3 days, with postal tracking!