Transistors

C(in): 4340pF. Cost): 1030pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 750A. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. On-resistance Rds On: 2.7M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 5480pF. Cost): 1210pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 88 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 680A. ID (T=100°C): 118A. ID (T=25°C): 169A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.0046 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Rds-on 0.0046 Ohms max. Drain-source protection : yes. G-S Protection: no

Manufacturer's marking: IRF1405PBF. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 169A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0053 Ohms @ 101A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 5480pF. Maximum dissipation Ptot [W]: 330W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 169A. Power: 150W. On-resistance Rds On: 0.0053 Ohms. Housing: TO-220. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 55V

C(in): 4780pF. Cost): 770pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 600A. ID (T=100°C): 110A. ID (T=25°C): 150A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.0037 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Rds-on 0.0037 Ohms max. Drain-source protection : yes. G-S Protection: no

C(in): 5600pF. Cost): 890pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 110 ns. Diode threshold voltage: 1.3V. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 520A. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.0078 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 130A. Power: 330W. On-resistance Rds On: 0.0078 Ohms. Housing: TO-220. Drain-source voltage (Vds): 75V

C(in): 6450pF. Cost): 1690pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Fast Switching, Automotive applications. Id(imp): 1080A. ID (T=100°C): 43A. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 1.8M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 5110pF. Cost): 1190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Fast Switching, Automotive applications. Id(imp): 700A. ID (T=100°C): 43A. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 3.9M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 3850pF. Cost): 610pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 280A. ID (T=100°C): 43A. ID (T=25°C): 82A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 13m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Manufacturer's marking: IRF2807PBF. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 82A. Power: 200W. On-resistance Rds On: 0.013 Ohms. Housing: TO-220. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 75V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F2807S. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 260A. Pd (Power Dissipation, Max): 290W. On-resistance Rds On: 0.019 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v

C(in): 6320pF. Cost): 1980pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 1020A. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 290W. On-resistance Rds On: 0.019 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 24 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 7500pF. Cost): 970pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 680A. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: IRF2907Z. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.035 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 180A. Idss (max): 180A. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.03 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB ( AUIRF2907ZS-7PPBF ). Voltage Vds(max): 75V

C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF3205PBF. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 98A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 3247pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250nA. IDss (min): 25nA. Equivalents: IRF3205SPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F3205S. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 98A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 3247pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3450pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 440A. ID (T=100°C): 75A. ID (T=25°C): 110A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 4.9m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: AUTOMOTIVE MOSFET. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 75A. Power: 170W. On-resistance Rds On: 0.0049 Ohm. Housing: TO-220AB. Drain-source voltage (Vds): 55V

C(in): 1300pF. Cost): 300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 174 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 108A. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 2400pF. Cost): 640pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 150A. ID (T=100°C): 30A. ID (T=25°C): 43A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.0042 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 71 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 43A. Power: 130W. On-resistance Rds On: 0.042 Ohms. Housing: TO-220. Drain-source voltage (Vds): 150V

C(in): 3230pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 180A. ID (T=100°C): 28A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 23m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no