IPA60R600E6

IPA60R600E6. C(in): 440pF. Cost): 30pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: ID pulse 19A. Id(imp): 19A. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 10uA. IDss (min): 1uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 6R600E6. Number of terminals: 3. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58 ns. Td(on): 10 ns. Technology: Cool Mos E6 POWER trafnsistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 06:25.