Transistors

Channel type: N. Type of transistor: MOSFET. Id(imp): 30A. ID (T=25°C): 10A. Pd (Power Dissipation, Max): 65W. On-resistance Rds On: 0.72 Ohms. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Number of terminals: 3. Function: Ifsm--30App. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Id(imp): 36A. ID (T=25°C): 12A. Idss (max): 12A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.32 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Quantity per case: 1. Function: High-speed switching

Channel type: N. Type of transistor: MOSFET. Id(imp): 36A. ID (T=25°C): 12A. Idss (max): 12A. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.32 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 250V. Quantity per case: 1. Function: High-speed switching

C(in): 5300pF. Channel type: N. Collector current: 100A. Ic(pulse): 150A. Ic(T=100°C): 75A. Marking on the case: FS75R12KE3G. Dimensions: 122x62x17.5mm. Pd (Power Dissipation, Max): 355W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42us. Td(on): 26us. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 2.15V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Function: ICRM 150A Tp=1ms. Number of terminals: 35. Note: 6x IGBT+ CE Diode. CE diode: yes. Germanium diode: no

C(in): 1380pF. Cost): 140pF. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: HIGH-SPEED SW.. Id(imp): 21A. ID (T=25°C): 7A. Idss (max): 1mA. IDss (min): 10uA. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.54 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 25 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/emitter voltage VGE(th)max.: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

C(in): 74pF. Channel type: N. Collector current: 1790A. Ic(pulse): 2400A. Ic(T=100°C): 1200A. Pd (Power Dissipation, Max): 7150W. RoHS: no. Assembly/installation: PCB through-hole mounting. Td(off): 0.92 ns. Td(on): 0.41 ns. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.7V. Collector/emitter voltage Vceo: 1200V. Threshold voltage Vf (max): 2.35V. Forward voltage Vf (min): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. Number of terminals: 7. Function: ICRM--Tp=1mS 2400A. Spec info: VCE(sat) 1.7V (Ic=1200A, VGE=15V, 25°C). CE diode: yes. Germanium diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT458. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.3A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT558. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.2A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT849. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 7A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT949. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 5.5A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 3W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 30 v. Vebo: 6V. Spec info: Very low saturation voltage

C(in): 1800pF. Cost): 280pF. Channel type: N. Conditioning: roll. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Id(imp): 200A. ID (T=25°C): 60A. Idss (max): 1uA. IDss (min): n/a. Marking on the case: G60N04K. Pd (Power Dissipation, Max): 65W. On-resistance Rds On: 5.3m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 6.5 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.1V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Function: power switching, DC/DC converters. Drain-source protection : yes. G-S Protection: no

Quantity per case: 1. CE diode: yes

Quantity per case: 1

C(in): 1700pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic level gated transistor. Id(imp): 80A. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 25uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 39W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Spec info: IDM--80A pulse. G-S Protection: no

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Collector current: 3A. Note: hFE 100...400. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Spec info: TO-92

C(in): 1450pF. Cost): 450pF. Channel type: P. Collector current: 20A. Ic(pulse): 60A. Ic(T=100°C): 20A. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1C ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Collector/emitter voltage Vceo: 250V. Gate/emitter voltage VGE: 20V. Number of terminals: 3. Function: P-channel MOS IGBT transistor. Spec info: audio amplifier. CE diode: no. Germanium diode: no

Channel type: N. Function: 'Current Resonance Inverter Switching'. Collector current: 30A. Ic(pulse): 100A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 400 ns. Td(on): 30 ns. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P( GCE ). Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.1V. Collector/emitter voltage Vceo: 600V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). CE diode: yes. Germanium diode: no

C(in): 4650pF. Channel type: N. Function: High Power Switching Applications. Collector current: 30A. Ic(pulse): 60A. Temperature: +150°C. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.3 ns. Td(on): 0.09 ns. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). CE diode: yes. Germanium diode: no

Channel type: N. Function: High Power Switching Applications. Collector current: 37A. Ic(pulse): 100A. Ic(T=100°C): 18A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.51 ns. Td(on): 0.33 ns. Housing: TO-3P( N )IS. Housing (according to data sheet): TO-3P. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 25V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). CE diode: yes. Germanium diode: no

Semiconductor material: silicon. Function: CTV-HA hi-res (F). Collector current: 24A. Ic(pulse): 36A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 180 ns. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 0.95V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 10V. Quantity per case: 1. Spec info: 0.17...0.31us. Housing: TO-3PF (SOT399, 2-16E3A)

Channel type: N. Conditioning: plastic tube. Collector current: 35A. Ic(pulse): 80A. Ic(T=100°C): 17A. Marking on the case: 10N120BND. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 12N60A4. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 54A. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 5.6V. Maximum dissipation Ptot [W]: 167W. Maximum collector current (A): 96A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS, IGBT with Anti-Parallel Hyperfast Diode. Production date: 2014/17. Collector current: 54A. Ic(pulse): 96A. Ic(T=100°C): 23A. Marking on the case: 12N60A4D. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 17 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.6V. Gate/emitter voltage VGE(th)max.: 5.6V. Number of terminals: 3. Spec info: >100kHz, 390V, 12A. CE diode: no. Germanium diode: no

Channel type: N. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Collector current: 24A. Ic(pulse): 96A. Ic(T=100°C): 12A. Marking on the case: G12N60C3D. Pd (Power Dissipation, Max): 104W. RoHS: no. Assembly/installation: PCB through-hole mounting. Td(off): 270 ns. Td(on): 14 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.65V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60A4. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 73 ns. Gate breakdown voltage Ugs [V]: 7V. Maximum dissipation Ptot [W]: 290W. Maximum collector current (A): 280A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C