Transistors

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): 35 ns. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60A4D. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 73 ns. Gate breakdown voltage Ugs [V]: 7V. Maximum dissipation Ptot [W]: 290W. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Maximum collector current (A): 280A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): UFS Series IGBT. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: HG20N60B3. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 220 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 165W. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Maximum collector current (A): 160A. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Collector current: 40A. Ic(pulse): 160A. Ic(T=100°C): 20A. Marking on the case: G20N60B3D. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Spec info: Typical Fall Time 140ns at 150°C. CE diode: yes. Germanium diode: no

Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Collector current: 75A. Ic(pulse): 240A. Ic(T=100°C): 60A. Marking on the case: G30N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.6V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. CE diode: no. Germanium diode: no

RoHS: yes. Housing: TO-247. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Collector current: 75A. Ic(pulse): 240A. Ic(T=100°C): 60A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Spec info: 463W. CE diode: yes. Germanium diode: no

Channel type: N-P. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 137 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.2V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no

Channel type: N. Collector current: 75A. Ic(pulse): 300A. Ic(T=100°C): 63A. Marking on the case: 40N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 145 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Spec info: 100kHz Operation At 390V 40A. CE diode: no. Germanium diode: no

Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 47 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no

Channel type: N. Collector current: 25A. Ic(pulse): 40A. Ic(T=100°C): 10A. Marking on the case: 5N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 182 ns. Td(on): 20 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 3.7V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. CE diode: yes. Germanium diode: no

Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR

Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. Function: High Speed ​​Switching. Max hFE gain: 47. Minimum hFE gain: 29. Collector current: 7A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 450V. Saturation voltage VCE(sat): 0.8V. Collector/emitter voltage Vceo: 400V. Vebo: 10V. Spec info: 'Epitaxial Planar Transistor'

Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Collector current: 0.1A. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) HSB1109

Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Collector current: 3A. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 30 v. Spec info: NON-insulated housing. Housing: TO-126 (TO-225, SOT-32)

C(in): 250pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. ID (T=25°C): 13A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 75307D. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 250pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. ID (T=25°C): 13A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 75307D. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

C(in): 3200pF. Cost): 1170pF. Channel type: N. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Function: Switching Regulator. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 75344 G. Pd (Power Dissipation, Max): 285W. On-resistance Rds On: 6.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 13 ns. Technology: UltraFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 3200pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 75344 P. Pd (Power Dissipation, Max): 285W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 13 ns. Technology: UltraFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Function: UltraFET Power MOSFET. Id(imp): 430A. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 75645 P. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.0115 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Function: UltraFET Power MOSFET. Id(imp): 430A. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 75645 S. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.0115 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AB ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

C(in): 850pF. Cost): 465pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 58 ns. Type of transistor: MOSFET. Function: Gate control by logic level. ID (T=100°C): 20A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 76121D. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.017 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 6 ns. Technology: UltraFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: HUF76145P3. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 110 ns. Switch-off delay tf[nsec.]: 135 ns. Ciss Gate Capacitance [pF]: 4900pF. Maximum dissipation Ptot [W]: 270W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

Channel type: N. Function: 6 x IGBT For Power Management. Collector current: 15A. Note: three phase AC motor driver. Frequency: 20kHz. Number of terminals: 24. Pd (Power Dissipation, Max): 29W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 750 ns. Td(on): 600 ns. Technology: Control Integrated POwer System (CIPOS™). Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Operating temperature: -40...+100°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 600V. Spec info: IC=20A TC=25°C, IC=15A TC=80°C. CE diode: yes. Germanium diode: no

Channel type: N. Function: 6 x IGBT For Power Management. Collector current: 20A. Note: three phase AC motor driver. Frequency: 20kHz. Number of terminals: 24. Pd (Power Dissipation, Max): 29W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 650 ns. Td(on): 970 ns. Technology: Control Integrated POwer System (CIPOS™). Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Operating temperature: -40...+100°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 600V. Spec info: IC=20A TC=25°C, IC=15A TC=80°C. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G03H1202. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 3A. Switch-on time ton [nsec.]: 9.2 ns. Switch-off delay tf[nsec.]: 281 ns. Gate breakdown voltage Ugs [V]: 3.9V. Maximum dissipation Ptot [W]: 62.5W. Maximum collector current (A): 9.9A. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C