IPA80R1K0CEXKSA2

Quantity	excl. VAT	VAT incl.
1 - 4	2.76$	2.76$
5 - 9	2.62$	2.62$
10 - 24	2.49$	2.49$
25 - 49	2.35$	2.35$
50 - 69	2.29$	2.29$

Quantity	U.P
1 - 4	2.76$	2.76$
5 - 9	2.62$	2.62$
10 - 24	2.49$	2.49$
25 - 49	2.35$	2.35$
50 - 69	2.29$	2.29$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 69

Set of 1

IPA80R1K0CEXKSA2. C(in): 785pF. Cost): 33pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: ID pulse 18A. Id(imp): 18A. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 50uA. IDss (min): 10uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 8R1K0CE. Number of terminals: 3. Pd (Power Dissipation, Max): 32W. On-resistance Rds On: 0.83 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos E6 POWER trafnsistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: -20V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 06:25.

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!