IKW50N60T

Quantity	excl. VAT	VAT incl.
1 - 1	10.04$	10.04$
2 - 2	9.54$	9.54$
3 - 4	9.04$	9.04$
5 - 9	8.54$	8.54$
10 - 19	8.34$	8.34$
20 - 29	8.14$	8.14$
30 - 56	7.46$	7.46$

Quantity	U.P
1 - 1	10.04$	10.04$
2 - 2	9.54$	9.54$
3 - 4	9.04$	9.04$
5 - 9	8.54$	8.54$
10 - 19	8.34$	8.34$
20 - 29	8.14$	8.14$
30 - 56	7.46$	7.46$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 56

Set of 1

IKW50N60T. C(in): 3140pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 143 ns. Function: Very low VCEsat. Collector current: 80A. Ic(pulse): 150A. Ic(T=100°C): 50A. Marking on the case: K50T60. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 299 ns. Td(on): 26 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 05:25.

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Delivery in 2-3 days, with postal tracking!