IKW25T120

Quantity	excl. VAT	VAT incl.
1 - 1	12.35$	12.35$
2 - 2	11.73$	11.73$
3 - 4	11.11$	11.11$
5 - 9	10.50$	10.50$
10 - 14	10.25$	10.25$
15 - 19	10.00$	10.00$
20 - 132	9.63$	9.63$

Quantity	U.P
1 - 1	12.35$	12.35$
2 - 2	11.73$	11.73$
3 - 4	11.11$	11.11$
5 - 9	10.50$	10.50$
10 - 14	10.25$	10.25$
15 - 19	10.00$	10.00$
20 - 132	9.63$	9.63$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 132

Set of 1

IKW25T120. C(in): 1860pF. Cost): 96pF. Channel type: N. Trr Diode (Min.): 200 ns. Function: 'Trench and Fieldstop' technology IGBT transistor. Collector current: 50A. Ic(pulse): 75A. Ic(T=100°C): 25A. Marking on the case: K25T120. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 560 ns. Td(on): 50 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.2V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 05:25.

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Delivery in 2-3 days, with postal tracking!