Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 17.13$ | 17.13$ |
2 - 2 | 16.27$ | 16.27$ |
3 - 4 | 15.41$ | 15.41$ |
5 - 9 | 14.56$ | 14.56$ |
10 - 14 | 14.21$ | 14.21$ |
15 - 19 | 13.87$ | 13.87$ |
20 - 38 | 13.36$ | 13.36$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 17.13$ | 17.13$ |
2 - 2 | 16.27$ | 16.27$ |
3 - 4 | 15.41$ | 15.41$ |
5 - 9 | 14.56$ | 14.56$ |
10 - 14 | 14.21$ | 14.21$ |
15 - 19 | 13.87$ | 13.87$ |
20 - 38 | 13.36$ | 13.36$ |
N-channel transistor, 40A, TO-247, TO-247N, 1200V - IKW40N120H3. N-channel transistor, 40A, TO-247, TO-247N, 1200V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247N. Collector/emitter voltage Vceo: 1200V. C(in): 2330pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 200 ns. Function: 'Trench and Fieldstop' technology IGBT transistor. Collector current: 80A. Ic(pulse): 180A. Marking on the case: K40H1203. Number of terminals: 3. Pd (Power Dissipation, Max): 483W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 290 ns. Td(on): 30 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. CE diode: yes. Germanium diode: no. Quantity in stock updated on 15/04/2025, 12:25.
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