Transistors

Channel type: N. Conditioning: roll. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 214W. On-resistance Rds On: 2.1M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: OptiMOS Power. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO263-7. Operating temperature: -55...+175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 60.4k Ohms. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.002 Ohms @ 100A. Gate breakdown voltage Ugs [V]: 3.3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 128 ns. Ciss Gate Capacitance [pF]: 840pF. Maximum dissipation Ptot [W]: 313W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 7500pF. Cost): 1900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 1uA. IDss (min): 0.01uA. Marking on the case: 4N03L02. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 2.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 62 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V. Spec info: Ultra Low On-Resistance. G-S Protection: no

C(in): 3400pF. Cost): 880pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.01uA. Marking on the case: 2N0607. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. On-resistance Rds On: 5.6M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 16 ns. Technology: MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no

C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 2. Pd (Power Dissipation, Max): 215W. On-resistance Rds On: 6.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no

C(in): 2360pF. Cost): 610pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.01uA. Marking on the case: 2N0609. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 7.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. Drain-source protection : yes. G-S Protection: no

C(in): 8000pF. Cost): 1700pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Function: High Frequency Switching, Optimized tecnology for DC/DC converters. Id(imp): 400A. ID (T=100°C): 100A. ID (T=25°C): 100A. Idss (max): 10uA. IDss (min): 0.01uA. Marking on the case: 034N06N. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. On-resistance Rds On: 2.8m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 63 ns. Td(on): 38 ns. Technology: OptiMOS(TM)3 Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3 ( DPAK ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2400pF. Cost): 920pF. Channel type: N. Id(imp): 350A. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 050N03L. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.0058 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 6.7 ns. Housing: D-PAK ( TO-252 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 7.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no

C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 3. Pd (Power Dissipation, Max): 215W. On-resistance Rds On: 6.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no

Channel type: N. Conditioning: roll. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 6.9W. On-resistance Rds On: 6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): PG-SOT223. Operating temperature: -40...+150°C

Type of transistor: MOSFET power transistor. Max drain current: 33A. On-resistance Rds On: 0.065 Ohms. Power: 171W. Housing: TO-220AC. Built-in diode: yes

Type of transistor: MOSFET power transistor. Max drain current: 106A. On-resistance Rds On: 0.018 Ohms. Power: 446W. Housing: TO-247AC. Built-in diode: yes

C(in): 130pF. Cost): 430pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Single FET, Dual Source. Id(imp): 72A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 5. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): HexSense TO-220F-5. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. Id(imp): 330A. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.12 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 3210pF. Cost): 690pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 290A. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.11 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Used for: -55...+175°C. Voltage Vds(max): 55V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Vgs 20V. ID (T=100°C): 71A. ID (T=25°C): 100A. Idss (max): 100A. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.009 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Ultra Low On-Resistance (Rds). Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V

C(in): 1900pF. Cost): 450pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. Id(imp): 140A. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF1310NPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 41A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F1310NS. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 42A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 5790pF. Cost): 3440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 46 ns. Type of transistor: MOSFET. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Sw.. Id(imp): 1412A. ID (T=100°C): 249A. ID (T=25°C): 353A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 1.2M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 83 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 24V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 7360pF. Cost): 1680pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 650A. ID (T=100°C): 115A. ID (T=25°C): 162A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 3.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF1404PBF. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 202A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 121A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 46 ns. Ciss Gate Capacitance [pF]: 5669pF. Maximum dissipation Ptot [W]: 333W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 4340pF. Cost): 1030pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 750A. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. On-resistance Rds On: 2.7M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F1404S. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 162A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 95A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 72 ns. Ciss Gate Capacitance [pF]: 7360pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C