Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.55$ | 6.55$ |
2 - 2 | 6.22$ | 6.22$ |
3 - 4 | 6.03$ | 6.03$ |
5 - 9 | 5.90$ | 5.90$ |
10 - 19 | 5.77$ | 5.77$ |
20 - 20 | 5.57$ | 5.57$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.55$ | 6.55$ |
2 - 2 | 6.22$ | 6.22$ |
3 - 4 | 6.03$ | 6.03$ |
5 - 9 | 5.90$ | 5.90$ |
10 - 19 | 5.77$ | 5.77$ |
20 - 20 | 5.57$ | 5.57$ |
N-channel transistor, 20A, TO-247, TO-247-3, 1350V - IHW20N135R3. N-channel transistor, 20A, TO-247, TO-247-3, 1350V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1500pF. Cost): 55pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive?cooking. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20R1353. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 405 ns. Td(on): 335 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 07/06/2025, 08:25.
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