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IGW75N60H3

IGW75N60H3
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 14.58$ 14.58$
2 - 2 13.85$ 13.85$
3 - 4 13.12$ 13.12$
5 - 9 12.39$ 12.39$
10 - 14 12.10$ 12.10$
15 - 19 11.81$ 11.81$
20 - 27 11.37$ 11.37$
Quantity U.P
1 - 1 14.58$ 14.58$
2 - 2 13.85$ 13.85$
3 - 4 13.12$ 13.12$
5 - 9 12.39$ 12.39$
10 - 14 12.10$ 12.10$
15 - 19 11.81$ 11.81$
20 - 27 11.37$ 11.37$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 27
Set of 1

IGW75N60H3. C(in): 4620pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Collector current: 140A. Ic(pulse): 225A. Ic(T=100°C): 75A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: no. Germanium diode: no. Quantity in stock updated on 12/01/2025, 06:25.

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