Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 14.58$ | 14.58$ |
2 - 2 | 13.85$ | 13.85$ |
3 - 4 | 13.12$ | 13.12$ |
5 - 9 | 12.39$ | 12.39$ |
10 - 14 | 12.10$ | 12.10$ |
15 - 19 | 11.81$ | 11.81$ |
20 - 27 | 11.37$ | 11.37$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 14.58$ | 14.58$ |
2 - 2 | 13.85$ | 13.85$ |
3 - 4 | 13.12$ | 13.12$ |
5 - 9 | 12.39$ | 12.39$ |
10 - 14 | 12.10$ | 12.10$ |
15 - 19 | 11.81$ | 11.81$ |
20 - 27 | 11.37$ | 11.37$ |
IGW75N60H3. C(in): 4620pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Collector current: 140A. Ic(pulse): 225A. Ic(T=100°C): 75A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: no. Germanium diode: no. Quantity in stock updated on 12/01/2025, 06:25.
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