IKW50N60H3

Quantity	excl. VAT	VAT incl.
1 - 1	9.63$	9.63$
2 - 2	9.15$	9.15$
3 - 4	8.67$	8.67$
5 - 9	8.19$	8.19$
10 - 19	7.99$	7.99$
20 - 29	7.80$	7.80$
30 - 174	7.51$	7.51$

Quantity	U.P
1 - 1	9.63$	9.63$
2 - 2	9.15$	9.15$
3 - 4	8.67$	8.67$
5 - 9	8.19$	8.19$
10 - 19	7.99$	7.99$
20 - 29	7.80$	7.80$
30 - 174	7.51$	7.51$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 174

Set of 1

IKW50N60H3. C(in): 116pF. Cost): 2960pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 130 ns. Diode threshold voltage: 1.65V. Function: High Speed Switching, Very Low VCEsat. Collector current: 100A. Ic(pulse): 200A. Ic(T=100°C): 50A. Marking on the case: K50H603. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Td(on): 23 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 25/12/2024, 01:25.

Technical documentation