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N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V - IKW50N60H3

N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V - IKW50N60H3
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Quantity excl. VAT VAT incl.
1 - 1 9.63$ 9.63$
2 - 2 9.15$ 9.15$
3 - 4 8.96$ 8.96$
5 - 9 8.67$ 8.67$
10 - 19 8.47$ 8.47$
20 - 29 8.19$ 8.19$
30 - 156 7.90$ 7.90$
Quantity U.P
1 - 1 9.63$ 9.63$
2 - 2 9.15$ 9.15$
3 - 4 8.96$ 8.96$
5 - 9 8.67$ 8.67$
10 - 19 8.47$ 8.47$
20 - 29 8.19$ 8.19$
30 - 156 7.90$ 7.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 156
Set of 1

N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V - IKW50N60H3. N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 50A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 116pF. Cost): 2960pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 130 ns. Diode threshold voltage: 1.65V. Function: High Speed Switching, Very Low VCEsat. Germanium diode: no. Collector current: 100A. Ic(pulse): 200A. Marking on the case: K50H603. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Td(on): 23 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 04/06/2025, 20:25.

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