IKW75N60T

Quantity	excl. VAT	VAT incl.
1 - 1	13.41$	13.41$
2 - 2	12.74$	12.74$
3 - 4	12.07$	12.07$
5 - 9	11.40$	11.40$
10 - 14	11.13$	11.13$
15 - 19	10.87$	10.87$
20 - 65	10.46$	10.46$

Quantity	U.P
1 - 1	13.41$	13.41$
2 - 2	12.74$	12.74$
3 - 4	12.07$	12.07$
5 - 9	11.40$	11.40$
10 - 14	11.13$	11.13$
15 - 19	10.87$	10.87$
20 - 65	10.46$	10.46$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 65

Set of 1

IKW75N60T. C(in): 4620pF. Cost): 288pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 182 ns. Function: Very low VCEsat. Collector current: 80A. Ic(pulse): 225A. Ic(T=100°C): 75A. Marking on the case: K75T60. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Td(on): 33 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 06:25.

Technical documentation