IRFB52N15D

IRFB52N15D. C(in): 2770pF. Cost): 590pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 230A. ID (T=100°C): 36A. ID (T=25°C): 51A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FB52N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.032 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: High frequency DC-DC converters, Plasma Display. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.