IRFB4310PBF

Quantity	excl. VAT	VAT incl.
1 - 4	5.20$	5.20$
5 - 9	4.94$	4.94$
10 - 24	4.68$	4.68$
25 - 49	4.42$	4.42$
50 - 99	4.32$	4.32$
100 - 162	3.81$	3.81$

Quantity	U.P
1 - 4	5.20$	5.20$
5 - 9	4.94$	4.94$
10 - 24	4.68$	4.68$
25 - 49	4.42$	4.42$
50 - 99	4.32$	4.32$
100 - 162	3.81$	3.81$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 162

Set of 1

IRFB4310PBF. C(in): 7670pF. Cost): 540pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 550A. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: IRFB4310. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 5.6M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.

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Delivery in 2-3 days, with postal tracking!