Transistors

C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: DIP4. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD120PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 0.78A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8 ns. Switch-off delay tf[nsec.]: 18 ns. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 360pF

C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 4.8A. ID (T=100°C): 0.38A. ID (T=25°C): 0.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. C(in): 22pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 6.4A. ID (T=100°C): 0.38A. ID (T=25°C): 0.8A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: third-generation power MOSFET transistor. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 270pF. Cost): 170pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: P-channel MOSFET transistor. Id(imp): 8.8A. ID (T=100°C): 0.8A. ID (T=25°C): 1.1A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 1.1A. On-resistance Rds On: 0.50 Ohms. Housing: DIP-4. Drain-source voltage (Vds): -60V

C(in): 570pF. Cost): 360pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: FET. Function: High-speed switching. Id(imp): 13A. ID (T=100°C): 1.1A. ID (T=25°C): 1.8A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: HD-1. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9024PBF. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.28 Ohms @ -0.96A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 570pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 200pF. Cost): 94pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 5.6A. ID (T=100°C): 0.49A. ID (T=25°C): 0.7A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET POWWER MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: DIP4. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9110PBF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.42A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 1.3W. Housing (JEDEC standard): 1.2 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.6A. ID (T=25°C): 0.1A. Idss (max): 0.1A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: DIP4. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9120PBF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ -0.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 9.6 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 390pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.34A. ID (T=25°C): 0.56A. Idss (max): 0.56A. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: HD-1. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9220PBF. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -0.56A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -0.34A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 7.3 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI3205PBF. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 34A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 4000pF. Maximum dissipation Ptot [W]: 63W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 360pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 29A. ID (T=100°C): 5.1A. ID (T=25°C): 7.2A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 37W. On-resistance Rds On: 0.27 Ohms. Td(off): 19 ns. Td(on): 8.8 ns. Technology: third-generation power MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220 FULLPAK. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI520GPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 7.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 4.3A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 19 ns. Maximum dissipation Ptot [W]: 37W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 360pF

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI530GPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 9.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 5.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI540GPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 53 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1400pF. Cost): 330pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 14A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 54W. On-resistance Rds On: 0.052 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220 FULLPAK. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 800pF. Cost): 240pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: IRFI630G. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 9.4 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI630GPBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 9.4 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 800pF. Maximum dissipation Ptot [W]: 32W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI640GPBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 5.9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1100pF. Cost): 190pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 380 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge. Id(imp): 23A. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 250uA. IDss (min): 25uA. Note: Viso 2500V. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no