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Semiconductors Transistors

IRFB4227

IRFB4227
Quantity excl. VAT VAT incl.
1 - 4 4.31$ 4.31$
5 - 9 4.09$ 4.09$
10 - 24 3.88$ 3.88$
25 - 49 3.66$ 3.66$
50 - 98 3.58$ 3.58$
Quantity U.P
1 - 4 4.31$ 4.31$
5 - 9 4.09$ 4.09$
10 - 24 3.88$ 3.88$
25 - 49 3.66$ 3.66$
50 - 98 3.58$ 3.58$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 98
Set of 1

IRFB4227. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 260A. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 19.7m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 190
IRF530

IRF530

C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quan...
IRF530
C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
IRF530
C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
Set of 1
1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$
Quantity in stock : 106
IRFBC30

IRFBC30

C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quant...
IRFBC30
C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFBC30
C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.53$ VAT incl.
(1.53$ excl. VAT)
1.53$
Quantity in stock : 60
IRF830

IRF830

C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ...
IRF830
C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF830
C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

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IR2153

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Note: Voffset 600V, Vclamp 15.6V. Number of terminals: 8. RoHS: yes. Assembly/installation: PCB thro...
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1N4148

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Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
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Quantity in stock : 61
BUZ102S

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C(in): 1220pF. Cost): 410pF. Channel type: N. Type of transistor: MOSFET. ID (T=100°C): 37A. ID (T=...
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IRF820

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Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of tra...
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CERM-10K-19

CERM-10K-19

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IRF730

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C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
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IRF3205

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C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of...
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Quantity in stock : 172
IRFP064N

IRFP064N

C(in): 4000pF. Cost): 1300pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qu...
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COILM22-R

COILM22-R

Inductance: 220uH. Resistance: 0.6 Ohms. Direction of terminals: radial connections. Pitch: 5.08mm. ...
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