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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V - IRFB4227

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V - IRFB4227
Quantity excl. VAT VAT incl.
1 - 4 4.31$ 4.31$
5 - 9 4.09$ 4.09$
10 - 24 3.96$ 3.96$
25 - 49 3.88$ 3.88$
50 - 99 3.79$ 3.79$
100 - 175 3.45$ 3.45$
Quantity U.P
1 - 4 4.31$ 4.31$
5 - 9 4.09$ 4.09$
10 - 24 3.96$ 3.96$
25 - 49 3.88$ 3.88$
50 - 99 3.79$ 3.79$
100 - 175 3.45$ 3.45$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 175
Set of 1

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V - IRFB4227. N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 19.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer International Rectifier. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 35
IRF830

IRF830

N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (...
IRF830
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRF830
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

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