IRFB4115

IRFB4115. Cost): 490pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 380W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 3V. Number of terminals: 3. Weight: 1.99g. C(in): 5270pF. Id(imp): 420A. On-resistance Rds On: 0.0093 Ohms. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 23:25.