Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.06$ | 5.06$ |
5 - 9 | 4.80$ | 4.80$ |
10 - 22 | 4.55$ | 4.55$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.06$ | 5.06$ |
5 - 9 | 4.80$ | 4.80$ |
10 - 22 | 4.55$ | 4.55$ |
IRFB42N20D. C(in): 3430pF. Cost): 530pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 180A. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FB42N20D. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.055 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.
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