IRFB4710

Quantity	excl. VAT	VAT incl.
1 - 4	4.91$	4.91$
5 - 9	4.66$	4.66$
10 - 24	4.42$	4.42$
25 - 49	4.17$	4.17$
50 - 58	4.07$	4.07$

Quantity	U.P
1 - 4	4.91$	4.91$
5 - 9	4.66$	4.66$
10 - 24	4.42$	4.42$
25 - 49	4.17$	4.17$
50 - 58	4.07$	4.07$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 58

Set of 1

IRFB4710. C(in): 6160pF. Cost): 440pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 300A. ID (T=100°C): 53A. ID (T=25°C): 75A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: FB4710. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.

Technical documentation