IRFB23N15D

IRFB23N15D. C(in): 1200pF. Cost): 260pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 92A. ID (T=100°C): 17A. ID (T=25°C): 23A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: B23N15D. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.