IRFB260N

IRFB260N. C(in): 4220pF. Cost): 580pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 220A. ID (T=100°C): 40A. ID (T=25°C): 56A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FB260N. Pd (Power Dissipation, Max): 380W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.