N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V - IRFB3206

Quantity	excl. VAT	VAT incl.
1 - 4	3.51$	3.51$
5 - 9	3.33$	3.33$
10 - 24	3.16$	3.16$
25 - 49	2.98$	2.98$
50 - 99	2.91$	2.91$
100 - 108	2.61$	2.61$

Quantity	U.P
1 - 4	3.51$	3.51$
5 - 9	3.33$	3.33$
10 - 24	3.16$	3.16$
25 - 49	2.98$	2.98$
50 - 99	2.91$	2.91$
100 - 108	2.61$	2.61$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 108

Set of 1

N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V - IRFB3206. N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 2.4M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 6540pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 840A. IDss (min): 20uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 04:25.

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