IRFB42N20DPBF

Quantity	excl. VAT	VAT incl.
1 - 4	3.90$	3.90$
5 - 9	3.70$	3.70$
10 - 24	3.51$	3.51$
25 - 49	3.31$	3.31$
50 - 81	3.23$	3.23$

Quantity	U.P
1 - 4	3.90$	3.90$
5 - 9	3.70$	3.70$
10 - 24	3.51$	3.51$
25 - 49	3.31$	3.31$
50 - 81	3.23$	3.23$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 81

Set of 1

IRFB42N20DPBF. C(in): 4820pF. Cost): 340pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: High Speed Power Switching. Id(imp): 390A. ID (T=100°C): 69A. ID (T=25°C): 97A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: IRFB4410ZPBF. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.072 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 00:25.

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Delivery in 2-3 days, with postal tracking!