IPD50N03S2L-06

Quantity	excl. VAT	VAT incl.
1 - 4	2.40$	2.40$
5 - 9	2.28$	2.28$
10 - 24	2.16$	2.16$
25 - 35	2.04$	2.04$

Quantity	U.P
1 - 4	2.40$	2.40$
5 - 9	2.28$	2.28$
10 - 24	2.16$	2.16$
25 - 35	2.04$	2.04$

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Quantity in stock : 35

Set of 1

IPD50N03S2L-06. C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 7.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 18:25.

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Delivery in 2-3 days, with postal tracking!