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Semiconductors Transistors

IRF1010E

IRF1010E
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.05$ 2.05$
5 - 9 1.94$ 1.94$
10 - 24 1.84$ 1.84$
25 - 49 1.74$ 1.74$
50 - 99 1.70$ 1.70$
100 - 119 1.53$ 1.53$
Quantity U.P
1 - 4 2.05$ 2.05$
5 - 9 1.94$ 1.94$
10 - 24 1.84$ 1.84$
25 - 49 1.74$ 1.74$
50 - 99 1.70$ 1.70$
100 - 119 1.53$ 1.53$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 119
Set of 1

IRF1010E. C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. Id(imp): 330A. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.12 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 93
IRF1010N

IRF1010N

C(in): 3210pF. Cost): 690pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of...
IRF1010N
C(in): 3210pF. Cost): 690pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 290A. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.11 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Used for: -55...+175°C. Voltage Vds(max): 55V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no
IRF1010N
C(in): 3210pF. Cost): 690pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 290A. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.11 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Used for: -55...+175°C. Voltage Vds(max): 55V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no
Set of 1
1.93$ VAT incl.
(1.93$ excl. VAT)
1.93$

We also recommend :

Quantity in stock : 39
IRFP2907

IRFP2907

C(in): 13000pF. Cost): 2100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ...
IRFP2907
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IRFZ44N

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IRF3710

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IXFH26N60Q

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Quantity in stock : 156
IRFP250N

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C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Dra...
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IRF3710S

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C(in): 3000pF. Cost): 640pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
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Quantity in stock : 39
IRFP150N

IRFP150N

C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Dra...
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BC327-16

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Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. ...
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Quantity in stock : 175
IRF3205

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C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of...
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Quantity in stock : 119
IRF1010E

IRF1010E

C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of...
IRF1010E
[LONGDESCRIPTION]
IRF1010E
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