IRF1310N

Quantity	excl. VAT	VAT incl.
1 - 4	1.90$	1.90$
5 - 9	1.81$	1.81$
10 - 24	1.71$	1.71$
25 - 49	1.62$	1.62$
50 - 99	1.58$	1.58$
100 - 131	1.43$	1.43$

Quantity	U.P
1 - 4	1.90$	1.90$
5 - 9	1.81$	1.81$
10 - 24	1.71$	1.71$
25 - 49	1.62$	1.62$
50 - 99	1.58$	1.58$
100 - 131	1.43$	1.43$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 131

Set of 1

IRF1310N. C(in): 1900pF. Cost): 450pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. Id(imp): 140A. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 12/01/2025, 05:25.

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Delivery in 2-3 days, with postal tracking!