IRC640

IRC640. C(in): 130pF. Cost): 430pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Single FET, Dual Source. Id(imp): 72A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 5. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): HexSense TO-220F-5. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 12/01/2025, 05:25.