IPD034N06N3GATMA1

Quantity	excl. VAT	VAT incl.
1 - 4	3.27$	3.27$
5 - 9	3.11$	3.11$
10 - 24	2.95$	2.95$
25 - 49	2.78$	2.78$
50 - 52	2.72$	2.72$

Quantity	U.P
1 - 4	3.27$	3.27$
5 - 9	3.11$	3.11$
10 - 24	2.95$	2.95$
25 - 49	2.78$	2.78$
50 - 52	2.72$	2.72$

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Quantity in stock : 52

Set of 1

IPD034N06N3GATMA1. C(in): 8000pF. Cost): 1700pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Function: High Frequency Switching, Optimized tecnology for DC/DC converters. Id(imp): 400A. ID (T=100°C): 100A. ID (T=25°C): 100A. Idss (max): 10uA. IDss (min): 0.01uA. Marking on the case: 034N06N. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. On-resistance Rds On: 2.8m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 63 ns. Td(on): 38 ns. Technology: OptiMOS(TM)3 Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3 ( DPAK ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 05:25.

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Delivery in 2-3 days, with postal tracking!