Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF3710PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 57A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 3130pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3000pF. Cost): 640pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 180A. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.025 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F3710S. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 57A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 3130pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 69A. ID (T=25°C): 110A. Idss (max): 110A. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.047 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 20V. Function: td(on) 12ns, td(off) 17ns

C(in): 2980pF. Cost): 1770pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Function: High Frequency Isolated DC-DC. Id(imp): 440A. ID (T=100°C): 69A. ID (T=25°C): 110A. Idss (max): 100uA. IDss (min): 20uA. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 4.7M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 20V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no

C(in): 2150pF. Cost): 680pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: High Frequency Synchronous Buck. Id(imp): 380A. ID (T=100°C): 65A. ID (T=25°C): 92A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.0048 Ohm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.45V. Vgs(th) min.: 1.55V. G-S Protection: no

C(in): 5310pF. Cost): 890pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 550A. ID (T=100°C): 97A. ID (T=25°C): 140A. Idss (max): 250uA. IDss (min): 20uA. Marking on the case: IRF3808. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.0059 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 2700pF. Cost): 600pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 1600 ns. Type of transistor: MOSFET. Function: Repetitive Avalanche Ratings. Id(imp): 48A. ID (T=100°C): 7.75A. ID (T=25°C): 12A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET transistor. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204A ). Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 3400pF. Cost): 1400pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 89 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 260A. ID (T=100°C): 52A. ID (T=25°C): 74A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.02 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF4905. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -74A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 61 ns. Ciss Gate Capacitance [pF]: 3400pF. Maximum dissipation Ptot [W]: 200W. Housing (JEDEC standard): 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F4905S. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F4905S. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 180pF. Cost): 81pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 20A. ID (T=100°C): 4A. ID (T=25°C): 5.6A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 43W. On-resistance Rds On: 0.54 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

Manufacturer's marking: IRF510PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 5.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 3.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 43W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 5.6A. Power: 43W. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 100V

C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 37A. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 8.8 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

Housing: TO-220AB. Manufacturer's marking: IRF520NPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 9.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 9.7A. Power: 48W. On-resistance Rds On: 0.20 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 100V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF520PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 9.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 19 ns. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 360pF

C(in): 2700pF. Cost): 790pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. ID (T=100°C): 29A. ID (T=25°C): 40A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 40A. On-resistance Rds On: 0.06 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): -100V

C(in): 2860pF. Cost): 800pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. ID (T=100°C): 24A. ID (T=25°C): 38A. Idss (max): 250uA. IDss (min): 50uA. Marking on the case: F5210S. Pd (Power Dissipation, Max): 3.8W. Assembly/installation: surface-mounted component (SMD). Td(off): 72 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F5210S. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -40A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -24A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 79 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no

C(in): 1200pF. Cost): 520pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 31A. Power: 110W. On-resistance Rds On: 0.06 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): -55V

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F5305S. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -31A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -16A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C