IPB80N03S4L-02

Quantity	excl. VAT	VAT incl.
1 - 4	3.34$	3.34$
5 - 9	3.17$	3.17$
10 - 24	3.01$	3.01$
25 - 49	2.84$	2.84$
50 - 53	2.77$	2.77$

Quantity	U.P
1 - 4	3.34$	3.34$
5 - 9	3.17$	3.17$
10 - 24	3.01$	3.01$
25 - 49	2.84$	2.84$
50 - 53	2.77$	2.77$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 53

Set of 1

IPB80N03S4L-02. C(in): 7500pF. Cost): 1900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 1uA. IDss (min): 0.01uA. Marking on the case: 4N03L02. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 2.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 62 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V. Spec info: Ultra Low On-Resistance. G-S Protection: no. Quantity in stock updated on 12/01/2025, 05:25.

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Delivery in 2-3 days, with postal tracking!