IPB80N06S2-09

Quantity	excl. VAT	VAT incl.
1 - 4	2.92$	2.92$
5 - 9	2.77$	2.77$
10 - 24	2.63$	2.63$
25 - 49	2.48$	2.48$
50 - 99	2.42$	2.42$
100 - 159	2.36$	2.36$

Quantity	U.P
1 - 4	2.92$	2.92$
5 - 9	2.77$	2.77$
10 - 24	2.63$	2.63$
25 - 49	2.48$	2.48$
50 - 99	2.42$	2.42$
100 - 159	2.36$	2.36$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 159

Set of 1

IPB80N06S2-09. C(in): 2360pF. Cost): 610pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.01uA. Marking on the case: 2N0609. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 7.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!