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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V - IRF1010N

N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V - IRF1010N
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.93$ 1.93$
5 - 9 1.83$ 1.83$
10 - 24 1.74$ 1.74$
25 - 49 1.64$ 1.64$
50 - 88 1.60$ 1.60$
Quantity U.P
1 - 4 1.93$ 1.93$
5 - 9 1.83$ 1.83$
10 - 24 1.74$ 1.74$
25 - 49 1.64$ 1.64$
50 - 88 1.60$ 1.60$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 88
Set of 1

N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V - IRF1010N. N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 250uA. On-resistance Rds On: 0.11 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3210pF. Cost): 690pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 290A. IDss (min): 25uA. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Used for: -55...+175°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 97
IRF1010E

IRF1010E

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=2...
IRF1010E
N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. Id(imp): 330A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRF1010E
N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. Id(imp): 330A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.05$ VAT incl.
(2.05$ excl. VAT)
2.05$

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