IPB80N06S2-07

Quantity	excl. VAT	VAT incl.
1 - 4	3.35$	3.35$
5 - 9	3.18$	3.18$
10 - 24	3.02$	3.02$
25 - 49	2.85$	2.85$
50 - 99	2.78$	2.78$
100 - 100	2.71$	2.71$

Quantity	U.P
1 - 4	3.35$	3.35$
5 - 9	3.18$	3.18$
10 - 24	3.02$	3.02$
25 - 49	2.85$	2.85$
50 - 99	2.78$	2.78$
100 - 100	2.71$	2.71$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 100

Set of 1

IPB80N06S2-07. C(in): 3400pF. Cost): 880pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.01uA. Marking on the case: 2N0607. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. On-resistance Rds On: 5.6M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 16 ns. Technology: MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no. Quantity in stock updated on 12/01/2025, 06:25.

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Delivery in 2-3 days, with postal tracking!