Transistors

Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 17A. Marking on the case: J4315O. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) FJL4215-O

Semiconductor material: silicon. Collector current: 20A. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Number of terminals: 3. Quantity per case: 1. Function: 19 inch monitor. Spec info: VEBO 6V

Conditioning: plastic tube. Semiconductor material: silicon. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Collector current: 20A. Ic(pulse): 30A. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 25

Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Collector current: 100mA. Ic(pulse): 300mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: SAMSUNG 0504-000117

Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 60. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Marking on the case: J13007. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Collector current: 8A. Ic(pulse): 16A. Marking on the case: J13007-1. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 39. Minimum hFE gain: 26. Collector current: 8A. Ic(pulse): 16A. Marking on the case: J13007-2. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 17. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J13009. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J13009-2. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 619. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 165 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Semiconductor material: silicon. FT: 190 MHz. Function: Switching Transistor. Max hFE gain: 480. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 4A. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) FMMT619. Spec info: screen printing/SMD code 720

Channel type: N-P. Function: Y4. Marking on the case: Y4. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMT5. Quantity per case: 2

Darlington transistor?: yes. Semiconductor material: silicon. FT: 80 MHz. Collector current: 8A. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Number of terminals: 3. Function: hFE 5000. Quantity per case: 1. Spec info: complementary transistor (pair) FP1016. Housing: TO-3PF (SOT399, 2-16E3A)

Semiconductor material: silicon. Collector current: 2A. Ic(pulse): 5A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Epitaxial Planar Silicon Transistor, Composite Schottky Barrier Diode. Housing (according to data sheet): SANYO--PCP4. Type of transistor: PNP. Vcbo: 30 v. Collector/emitter voltage Vceo: 25V. Number of terminals: 7. Quantity per case: 1. Spec info: 2SB1121 and SB05-05CP integrated in one case

Darlington transistor?: yes. Semiconductor material: silicon. FT: 65 MHz. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Number of terminals: 3. Function: hFE 5000. Quantity per case: 1. Spec info: complementary transistor (pair) FN1016. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes

Semiconductor material: silicon. Max hFE gain: 280. Minimum hFE gain: 100. Collector current: 3A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): PCP4. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 15V. Quantity per case: 2. Number of terminals: 6. Spec info: Transistor + diode block. CE diode: yes

C(in): 1.45pF. Channel type: N. Collector current: 39A. Ic(pulse): 50A. Ic(T=100°C): 25A. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: ICRM--50A Tp=1mS, Tc=25°C. Number of terminals: 33dB. Note: 7x IGBT+ CE Diode. CE diode: yes. Germanium diode: no

C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. On-resistance Rds On: 0.93 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C_F109. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA 11N90. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.96 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 340 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 218W. On-resistance Rds On: 0.43 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1

C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 74A. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no

C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 96A. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 290W. On-resistance Rds On: 0.156 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no